《Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties》.pdf.pdf

,No。7(2014)076801Fabrication0fV02td’.-‘·l爿c梁继然))十,Wu一吴劢君),Hu胡明),Liu剑)),朱乃伟),一夏晓旭),一陈弘达)c)()1The.(1l1)1)..i1al—i.()()【lJ5】【1l一15】()‘【1[18】,tl1RTA.()Ttri。,.×一4仃)***@,(2014)—,pre-sputteringofthevanadiumtargetwasper-—nessofthevanadiumthinfilmwascontrolledbythesputteringtime;thesputteringtimewas10min,15min,and20min,thethicknesswas70nm,100nm,and120nm,,thefilmswereannealedinanultrapureoxygenambientinafurnacefALLWINAG610).Accordingtootherresearcher’sresults.【19]theannealingtemperaturewassetat450。,15min,and20minarenamedS1,S2,andS3,respectively,—raydiffraction(XRD)(Rigaku,D/MAX2500V/PC)patternsusingtheCuKradiationf.;L=)..rayphotoelectronspec..troscopy(XPS)(PHI1600).eopticaltransmittancespectrawereobtainedbyaspectrometerinthewavelengthrangeof40(1-~-