Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide.pdf.pdf

Hindawi Publishing CorporationAdvances in Condensed Matter PhysicsVolume 2012, Article ID439617,10pagesdoi: ArticleAnalysis of Erbium and Vanadium Diffusion inPorous Silicon CarbideMarina G. Mynbaeva,1Evgeny L. Pankratov,2Evgeniy N. Mokhov,1and Karim D. Mynbaev11Io?e Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, Russia2Mathematical Department, Faculty of Radiophysics, Nizhny Novgorod State University, 65 Il’insky Street,Nizhny Novgorod 603950, RussiaCorrespondence should be addressed to Karim D. Mynbaev,******@? 5 March 2012; Revised 1 June 2012; Accepted 15 June 2012Academic Editor: FinkCopyright ? 2012 Marina G. Mynbaeva et al. This is an open access article distributed under the mons AttributionLicense, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is data on di?usion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200?Chavebeenused for modelling di?usion in porous SiC. It is shown that the consideration of pore structure modi?cation under annealing viavacancy redistribution allows for satisfactory description of dopant di?usion. As expected, important contribution to the di?usionin the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface di?usion coe?cient on the wallsappears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channelsinto closed voids, pathways for accelerated di?usion cease to exist and di?usion rates in porous and nonporous . IntroductionSilicon carbide (SiC) is a semiconductor that possessesproperties highly suitable for high-power, high-frequency,and high-temperature microelectronic applications. For along time, selective doping in SiCtechnology has been imple-mented mostly with ion implantation. Di?usion doping