silicon quantum dots grown by ion implantation and annealing….ppt

Silicon Quantum Dots: Grown by Ion Implantation and annealingBy Mary CoanOutline?History of Silicon quantum dots–How they were made?Properties of Silicon Quantum Dots grown by ion implantation and annealing?Advantages/Disadvantages ?Different methods to grow Silicon Quantum Dots–Which method is the best??SummaryHistory of Si QDs?1960’s: First quantum size effects were seen in semiconductor nanocrystals?1970’s: Louis Brus was working in Bell Labs researching colloidal synthesizes ?1980’s: First semiconductor quantum dots were grown?1990: First visible-photoluminescence seen from Si QDsHistory of Si QDs?1993: Silicon optoelectronic integrated circuit is suggested?1993 to present: Si Quantum dots have been extensively researched–Different fabrication methods?microwave plasma position of SiH4?laser breakdown of SiH4?plasma-enhanced chemical vapor deposition?high frequency discharge?high dose ion implantation Formation of Si QDs: Ion implantation and . Iwayama, T. Hama, . Hole, . Boyd, Vacuum 81, 179 (2006).Properties of Si QDs?Photoluminescence–Peak energy and intensity?Size ranges from 1 nm to over 10 nm in diameter ?Size distribution within host . White, . Budai, . Withrow, . Zhu and . Pennycock, IEEE Conference Proceeding 824 (1996). . Iwayama, T. Hama, . Hole, . Boyd, Vacuum 81, 179 (2006). . Iwayama, T. Hama, . Hole, . Boyd, Vacuum 81, 179 (2006). Suggested . Iwayama, T. Hama, . Hole, . Boyd, Solid-State Electronics 45, 1487 (2001).