Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with.pdf

SIMULATION OF ARSENIC DIFFUSION DURING RAPID THERMAL ANNEALING OF SILICON LAYERS DOPED WITH LOW-ENERGY HIGH-DOSE ION IMPLANTATION . Velichko 1 , . Mironov 2, . Tsurko 3 , . Zayats 3 1 Belarusian State University on Informatics and Radi oelectronics, 6 P. Brovka Street, Minsk, 220013 Be- larus; e-mail: oleg_velichko@ 2 Institute of Applied Physics Problems, Belarusian State University, 7 Kurchatov Street, Minsk, 220064 Belarus; e-mail: ******@ 3 institute of Mathematics, Academy of Sciences of Belarus, 11 Surganova Street, Minsk, 220072 Belarus; e-mail: ******@im..by The model of transient enhanced diffusion of ion-implanted As is formulated and the fini te-difference method for numerical solu - tion of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more ac- curate description of arsenic clustering are simultaneously ta king into account. Simulation of As diffusion during rapid anneal ing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion impl antation; arsenic; silicon PACS: Introduction As the lateral dimensions of modern integrated cir- cuits are scaled down to the submicrometer range, the need for accurate models of silicon doping is in- creased. The well-known and widely used models of transient enhanced diffusion d