淘豆网
下载此文档放大查看缩小查看   1/3
下载前请先预览,预览内容跟原文是一样的,在线预览图片经过高度压缩,下载原文更清晰。
0/100
您的浏览器不支持进度条


播放器加载中,请稍候...
更多>>该用户其他文档
下载所得到的文件列表
Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with.pdf
文档介绍:
SIMULATION OF ARSENIC DIFFUSION DURING RAPID THERMAL ANNEALING OF SILICON LAYERS DOPED WITH LOW-ENERGY HIGH-DOSE ION IMPLANTATION O.I. Velichko 1 , A.M. Mironov 2, V.A. Tsurko 3 , G.M. Zayats 3 1 Belarusian State University on Informatics and Radi oelectronics, 6 P. Brovka Street, Minsk, 220013 Be- larus; e-mail: oleg_velichko@ 2 Institute of Applied Physics Problems, Belarusian State University, 7 Kurchatov Street, Minsk, 220064 Belarus; e-mail: MironovA@bsu.by 3 institute of Mathematics, Academy of Sciences of Belarus, 11 Surganova Street, Minsk, 220072 Belarus; e-mail: vtsurko@im..by The model of transient enhanced diffusion of ion-implanted As is formulated and the fini te-difference method for numerical solu - tion of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more ac- curate description of arsenic clustering are simultaneously ta king into account. Simulation of As diffusion during rapid anneal ing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion impl antation; arsenic; silicon PACS: 66.30.Jt Introduction As the lateral dimensions of modern integrated cir- cuits are scaled down to the submicrometer range, the need for accurate models of silicon doping is in- creased. The well-known and widely used models of transient enhanced diffusion during rapid thermal an- nealing of semiconductor substrates very often lead to the results that disagree wi th the experimental data for low-energy high-dose ion impl antation. The difference is mainly due to using inadequate clustering models for describing high concentration dopant diffusion [1] and due to the influence of interfac es on the distributions of defects [2]. In this paper the model of transient enhanced diffu- sion of ion-implanted arsenic simultaneously taking into account the nonuniform distri bution of point defects near the interface and more accurate consideration of arsenic clustering is present ed. To solve the system of diffusion equations obtained, a numerical algorithm was formulated and a code was developed. Simulation of the diffusion of ion-implanted arsenic in the vicinity of the surface agrees well with the experimental data of [3]. Model It is suggested that arsenic diffusion occurs due formation, migration, and dissociation of the pairs “ r D As + ”, where + As and r D are the substitution- ally dissolved arsenic atom and intrinsic point defect, respectively [4]. A thermodynamic approach based on the local equilibrium between the substitutionally dis- solved arsenic, point defects and the pairs leads to the following system of diffusion equations: Equation of diffusion of dopant atoms . ~ ) ~ ( 1 ∑= ????????+ ????= ?? p k k k T x C C x C C D x t C χχ (1) Equation of diffusion-drift-reaction of point de- fects [5] . 0 ~ ~ ~ v ~ 2 2 1 = + ????????????× × = ∑ 内容来自淘豆网www.taodocs.com转载请标明出处.
更多>>相关文档
文档信息
最新下载
文档标签