The Fundamental Mechanisms of the Absorption Process of Si During Rapid Thermal Process.pdf

JournalofMaterialsScienceandEngineeringB2(10)(2012)517-522 TheFundamentalMechanismsoftheAbsorption ProcessofSiDuringRapidThermalProcess IvaldoTorreslCristobalVozandRamonAleubilla2 jlGrupoLOGOS,DepartamentoEETS,FacultaddeIngenier&sYArquitecturasUniversidadde Pamplona Bucaramanga,PamplonaNortedeSantander,Colombia 2·Departamentd'EngenyeriaElectr3nica,icadeCatalunyaC/GranCapit?~s/n,Campus Barcelona,Espa~a Received:AugustOl,2012/Accepted:September02,2012/Published:October252012 Km1 口口 Nord08074 Abstract:Thisworkpresentstheexperimentalprocedureofmeasuresin—situofthetemperatureofthesiliconwafersp-typewith thicknessof200lam,300lamand400gmusingtoIR- () -situtransmissionequipmentatanquartztube furnacecontainingofahighpowerHamamatsusmallangle(5。)IR-LED(L=7,850,九=)binationwithaHamamatsu IR-sensorfG8370). Keywords:Absorptioncoefficient,silicon,IR-transmission,temperature,interbandtansitionfreecarrierabsorption /n’situmeasurementofthesiliconwafertemperature duringsolarcellprocessingisadifficultmatterforhigh temperatureprocesssteps(>600。C).Pyrometryoften isusedbutcausesproblemssinceemissivitydepends onwafertemperature,dopingandsurfacefinishing, theb