场效应管9435.doc

场效应管 9435 SSM9435 P-Channel Enhancement Mode MOSFET Product Summary Product Summary VDS (V) ID (A) -30V - RDS(ON) (mΩ) Max 55 ***@VGS = -10V 85 ***@VGS = - South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea SemiconductorAugust 2005 (Rev ) 1 of 71 of7 ABSOLUTE MAXIMUM RATINGS (TABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) = 25C unless otherwise noted) THERMAL CHARACTERISTICSTHERMAL CHARACTERISTICS ParameterSymbol Limit Unit o Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ= 125 C -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal ResistanceJunction-to-Ambient oaaab VDS VGS ID IDM IS PD TJTSTG R?JA -30 VVAAA C/W WCoo 20-+ - -27 - -55 to 150 50 SO-8 D (5678) G (4) S(123) FEATURES ??Super high dense cell design for low RDS(ON). ??Rugged and reliable. ??Surface Mount package. 12345678 换页 SSM9435 South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea SemiconductorAugust 2005 (Rev ) 2 of9 P-Channel Electrical Characteristics (TP-Channel Electrical Characteristics (TA = 25C unless otherwise noted) = 25C unless otherwise noted) o Unit Symbol Parameter Condition Min Typ Max c Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance BVDSS IDSS IGSS VGS(th) RDS(ON) VGS=0VID=-250 ?A VDS=-24VVGS=0V VGS=?20VVDS=0V VDS=VGS ID=-250?A VGS=-10VID=- VGS=-=- m? VV ?A nA -30 -1 ?100 - 55 85 -1 45 75 On-State Drain Current Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ID(ON) gFS tD(ON) tr tD(OFF) tf VDS=-5VVGS=-10V VDS=-5VID=- VDD=-15V VGEN=-10V RL=15? -20 5 10 36 25 10 ns PF SA Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS