carbide-free one-zone sulfurization method grows thin mos2 layers on polycrystalline cvd diamond michaela sojková外文参考.pdf

该【carbide-free one-zone sulfurization method grows thin mos2 layers on polycrystalline cvd diamond michaela sojková外文参考 】是由【宝钗文档】上传分享，文档一共【11】页，该文档可以免费在线阅读，需要了解更多关于【carbide-free one-zone sulfurization method grows thin mos2 layers on polycrystalline cvd diamond michaela sojková外文参考 】的内容，可以使用淘豆网的站内搜索功能，选择自己适合的文档，以下文字是截取该文章内的部分文字，如需要获得完整电子版，请下载此文档到您的设备，方便您编辑和打印。:..entificreportsopeNCarbide-freeone-zonesulfurizationmethodgrowsthinMos2layersonpolycrystallineCVDdiamondReceived:2October2018Michaelasojková1,peterSiffalovic2,olegBabchenko1,GabrielVanko1,edmundDobro?ka1,Accepted:28December2018JakubHagara2,NadaMrkyvkova2,evaMajková2,tiborI?ák3,AlexanderKromka3&Published:,wereportonthefabricationoffew-,pre-depositedmolybdenumcoatingsweresulfurizedinaone--preparedMos2layerswerecharacterizedbyseveraltechniquesincludinggrazing-incidencewide-angleX-rayscattering,atomicforcemicroscopy,scanningelectronmicroscopy,RamanspectroscopyandX---knownthatModiffusesintodiamondatelevatedtemperatures,,,,thediamondandmolybdenumdisulfidethinfilmsrepresentanattractivepairwithapromisingpotentialforsustainabletechnologiessuchaswaterdisinfection1,2,watersplit-ting3orsolarcells4–(TMDCs)arelayeredmaterialswithaformulaMX2,whereMandXcor-respondtoatransitionmetalandchalcogen,-Mo--,8,however,,inparticular,-effecttransistors(FETs)10,11,photodetec-tors12,ells13,14,light-emittingdiodes15andcatalysts16,17,–,itsgreatmechanicalhardness,wearresistance,chemicalinertness,highthermalconductivity,opticaltransparency,binedinoneplatformareadvantageousfornumerousapplication19–-tivecoatingsforcuttingtoolsandsealing22,23,infraredwindowsandopticalelements24,25,MEMSandelectronicdevices26,27,heaterelementsorheatsink28,29andalsoinvariousbio-relatedresearches21,30–,theantibacterialeffectofdiamondthinfilmsand/ordiamondnanoparticleswasalsoinvestigated33,,diamondmayactasamechanicallystableandchemicallyinertcarriersubstratewithahighthermalconductivitywhichadditionallycanbemadeelectricallyconductiveviaborondoping19–,thesurfaceofthediamondfilmcanbestructuredtoincreasethesurfacearea35,,-positesofMoS2withdiamond-likecarbonfilmshavebeenreportedtodate37,(600nm)werefabricatedbyabiasedtargetionbeamdepositiontechniquesimultaneouslysputteringaMoS2targetanddepositingDLCfromCH4gas37,,SAS,Dúbravskácesta9,84104,Bratislava,,SAS,Dúbravskácesta9,84511,Bratislava,,Cukrovarnícka10,16200,Praha6,.(email:michaela.******@)ScientificRepoRts|(2019)9:2001|https:///-018-38472-91:..entificreports/-.(a)SEMimageand(b)Ramanspectrumofa?,--zationofthinpre-,–42,,,--freeexperimentalset--(Mo2C)growsattemperaturesabove550°CfromthinMofilmsdepos-itedondiamond43,,Modiffusionintothe?diamondsubstrateanda?,itwasfoundthatthethicknessoftheinitialMofilmdeterminedwhetherthefinalMoS2layerwasalignedparallelorperpendiculartothesubstrate45–,|(2019)9:2001|https:///-018-38472-92:..entificreports/(a)1nm,(b)3nmand(c,d)(d),,3and6nmthickMofilmonamicrocrystallineCVDdiamondsubstratewith(a)thetwodominantMoS2peaksand(b)(PECVD)?microcrystallineCVDdiamondfilmsweregrownfromH2/CH4/CO2gasmixturewithaflowrateof300/15/,|(2019)9:2001|https:///-018-38472-93:..entificreports/(a)Mo3dand(b)S2pcore-,°-,ronsputteringinAratmosphere(10?3mbar),-,MoS2filmswerepreparedbysulfurizationofpre-depositedMolayersinacustom-,-zonefurnacehasthesubstrateandsulfurpowderplacedatthesamepositionandtemperatureinthecenteroffurnaceasshowninFig.?°?°Cand30min,,thetemper-aturewasrampeddownto200°Catarateof20°?1,(WiTec,Germany)×(NA=),agratingwith1800gr/?(X-rayphotoelectronspectroscopy)spectrawererecordedusingThermoScientificK-AlphaXPSsystem(ThermoFisherScientific,UK)equippedwithamicro-focused,monochromaticAlKαX-raysource().X-raybeamof400μmindiameterwasusedat6mA×(150eVpassenergy),enablingrapidcollectionofdata(5sperregion).pensationwasachievedwiththesystemfloodgunthatprovideslowenergyelectronsandlowenergyargonions(20eV)|(2019)9:2001|https:///-018-38472-94:..entificreports/(redline)andgrazing-incidence(blueline)geometryofMoS2layerspreparedfrom(a)3nmand(b),,(SEM)(AFM)inatappingmode(Bruker,DimensionEdge),chedsiliconprobe(Bruker,RTESPA-300).ThecrystallographicstructureandorientationofthefilmswereexaminedbyX-raydiffraction(XRD)(CuKα)intheclassicalBragg–Brentanoandinthegrazing--incidencewide-angleX-rayscattering(GIWAXS)measurementswereperformedusingNanostarsystem(BrukerAXS,Germany)equippedwithIμSmicrofocusCuX-raysource(λ=).TheparallelX--angleofincidenceofX-°.Reciprocalspacemapsweremeasuredusinganimageplatedetectoratasample-to-.?(Fig.?2b)displaysthedominantRamanactivemodeat1332cm?1(F2g).?,sulfurizedfromthethinnestMofilm(1nmthick),consistfromisolatedorpartiallyinterconnectedislands(flakes)havinghexago-nalshapeinsomecases(Fig.?3a).Inthecaseofthe3nmthickMoseedingfilm,theas-grownlayerseemstobecontinuouscoveringallthefacetsofthediamondsubstrate(Fig.?3b).Finally,thesulfurizationofthethickestScientificRepoRts|(2019)9:2001|https:///-018-38472-95:..entificreports/(a)3nmand(b)(6nm)revealsasignificantchangeintheMoS2preferentialgrowthmode(Fig.?3c,d).Weobservethinflakesverylikelystandinguprightonthediamondfacets(Fig.?3d).WiththeincreasingMothickness,-nessplaysanimportantroleinthec-axisorientationexactlyasinthecaseoftheMoS2filmsgrownontheflatsubstrates45,47,49,-axisperpendiculartothesubstrateplane,thethickerMoleadstoc-axisrotatedby90°.RamanspectrashowninFig.??4adisplaysapartofthespectrumwithlinesbelongingto2H-MoS2,namelytheE2gmodeataround382cm?1andtheA1gmodeat~407cm?’sintensitywithanincreasingtheinit