高速高性能应变sisige异质结器件研究.docx

摘要
摘 要
硅基(Si,SiGe)应变技术将“能带工程"和“应变工程’’同时引入了Si基器件和集成电路,分别利用张应变材料Si电子迁移率和压应变材料SiGe空穴迁移率比体材料Si高,以及易于形成量子阱的优越特性,可以制作出高速/高性能的 nMOSFET、pMOSFET和HBT。但要在同一层结构的材料上实现BiCMOS的集成则比较困难。
针对这一问题,本论文对集成应变Si和应变SiGe沟道的Si/SiGe异质结CMOS 和Si/SiGe HBT进行了较深入研究。研究了应变Si和应变SiGe沟道MOSFET器件的结构和工作机理,详细分析了Si/SiGe HCMOS(异质结构CMOS)结构和优缺点,并考虑到BiCMOS集成的需要,设计了一种Si/SiGe HCMOS结构和一种 Si/SiGe HBT结构,并进行medici模拟仿真。
基于上述研究,本文又提出了一种新颖的全平面Si/SiGe BiCMOS结构。该结构同时包含压应变SiGe空穴量子沟道和张应变Si电子量子沟道。HCMOS和HBT 采用完全一致的层结构设计,不需要腐蚀有源层,并与Si工艺相兼容。
最后,在建立全平面结构Si/SiGe BiCMOS器件模型基础上,对其结构进行了有意义的讨论。将反相器作为对该结构的一个应用,采用电路模拟工具Spice模拟了其传输特性。模拟结果表明所设计的全平面结构Si/SiGe BiCMOS结构合理、器
件性能有所提高。
本文提出的全平面结构Si/SiGe BiCMOS结构具有创新性。
关键词:应变Si nMOSFET 应变SiGe pMOSFET HCMOS SffSiGe HBT
量子阱全平面BiCMOS结构 高速/高性能
Abstract
Abstract
SiGe strained technology has brought‘‘Energy-Band Engineering’’and‘‘Strained Engineering'’into Si Devices and circuits at the$1tlIle use the advantage of the carrier mobility of tensile Si or pressure SiGe,We c锄manufacture nMOSFET, pMOSFET and HBTs with High Speed/high it is difficult to integrate them笛BiCMOS together祈tll the same layer structure.
Against such problem,this thesis has a deeper study Oil the integration of Strained Si/SiGe HCMOS and SiGe HBT,and analyses the device structures and working mechanism of Strained Si/SiGe HCMOS and Si/SiGe HBTs,illuminate the advantage and disadvantage of these view of the above,engineer Si/SiGe HCMOS and HBT structures for BiCMOS integration.
According to the above study,This thesis also has put forward a plete-flat Si/SiGe BiCMOS structure which contains both tensile Si and pressure SiGe quantum well layers of HCMOS and HBT al pletely consistent, it isn’t needed to corrupt the source layers and patible、Ⅳith Si polytethnics.
Finally,base On the creation plete—flat Si/SiGe BiCMOS structure,we have SOme nessary we take the Invert雒an application of that BiCMOS structure,at the$a111e time,to simulate its transient response