cu低k互连系统可靠性研究-微电子学与固体电子学专业毕业论文.docx

Abstract
Abstract
The main purpose of this article is to study the reliability of copper/low—k interconnects,especially on Electromigration and Stress—migration test method and failure mechanism of Electromigration were studied,and effective methods to improve the electromigration reliability were Element Analysis was
used to study residual stress in Cu interconnects,different structures including various via diameter,line width,residual length,and dielectric material were investigated to
analyze structural effects on residual voiding test of Cu interconnects had been done to observe the voiding —induced voiding failure in Cu interconnects with different via diameter Was voiding
mechlaaism and the effect of via size on stress migration had been studied.
The results indicated that the Cu/dielectric interface Was the fastest diffusion path. improving the interface characteristic Can effectively depress Electromigration failure. Residual stress reached the maximum value inside the vi巩and stress gradient achieved the peak value in 10Wer metal line under er of the stress decreased as the via diameter or the dielectric constant of lLD decreasing,and increased as the line width or the residual length gradient decreased as the via diameter, the dielectric constant of ILD or the residual length decreasing,and increased as the line width vacancies diffused in the direction of the stress gradient and nucleate at the peak value of the stress voiding rate Was eO—determined by
the stress and the stress gradient.
Keyword:Cu interconnects failure Electromigration Stress—migration
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