gooshanchen位移增强效应及fabryperot振荡场传感器研究.docx

上海交通大学博士论文
个重要的结论:GH位移的符号取决于共振模的内在损耗与辐射损耗。当内在损耗大于辐射损耗时,GH位移取负值,反之为正,并且内在损耗与辐射损耗之差越小,GH位移的绝对值就越大。Ⅵn Xiaobo等人实验发现的现象只是这个结论的一个特例。而且这个结论不仅适用于表面等离子波共振,还适用于导波共振。在泄漏波导上的GH位移增强效应虽然在1998年被Frank Schreier等人在理论上报道过,但是, 他们并不考虑材料的吸收,所得到的GH位移为正。在我们考虑了泄漏波导中材料的吸收以后,发现GH位移不仅可以为正,也还可以为负。
在前面这个结论的基础上,我们还发现在双面金属波导结构上可以实现符号同时相反的TE、TM的GH位移增强效应。这个GH位移由在自由空间耦合技术下激发的导波而产生。在合适的参数下,TE与 TM的导模共振角可以基本重合,对TM波,内在损耗小于辐射损耗, 而对TE波,则恰好相反,内在损耗大于辐射损耗。因此,TM波的GH 位移为正,TE波的GH位移为负。’
我们另外还提出了一种新型Fabry—Perot(简称F-P)振荡场传感器。不同于传统的迅衰场传感器,在这种传感结构中,待测样品位于振荡场中。而且这种传感器也可以获得很窄的反射吸收峰,因此其灵敏度大大提高,显著高于传统的迅衰场传感器,例如全内反射结构传感器,SPR结构传感器和泄漏模结构传感器。除了灵敏度高,这种传感结构还具有制作工艺简单,与偏振无关等优点,在光化学传感领域有着广泛的应用前景。
上海交通大学博士论文
关键词:;静态位相理论;表面等离子波共振;导波共振:自由空间耦合;振荡场传感器;迅衰场传感器。
III
上海交通大学博士论文
ENHANCEMENT EFFECT OF GOOS一咖CHEN SHIFT
AND FABRY二PERoT oSCILLATING lilELD SENSoR
ABsfrRACT
Goos—Hgnchen shift refers to the lateral shift of a totally reflected beam from the position predicted by geometrical is because each plane ponent of the incident beam undergoes a slight different phase change after total internal representation approaches to the Goos-Hanchen shift have been this paper, we examine theoretically the GH shift under the conditions of guided
wave resonance and surface plasmon resonance by using the stationary
phase method and numerical calculation method with an incident beam of the Gaussian shape.
At a single dielectric interface,the GH shift is of the order of smallness of the shift for optical wavelengths had impeded its direct observation in a single ,on the one hand,the wavelengths in the microwave range are selected to perform
the other hand,the enhancement effects of GH shift under different conditions were analyzed in many to now, many kinds of enhancement effects of GH shift were
enhancement effect of GH shift due to the surface plasmon resonance was
discussed in 2004,Xiaobo Yin et re