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193nm光刻技术介绍.ppt

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“resist”poundsTypesofResistsPositiveWhentheresistisirradiatedwithacertainwavelengthoflight,essolubleinasolvent(calledadeveloper)TheareathatisunexposedisinsolubleNegativeWhentheresistisirradiatedwithacertainwavelengthoflight,esinsolubleinthedeveloperTheareathatisunexposedisoriginallysolubleinthedeveloperWaferProcessingThepolymerisspincoatedonthesiliconwaferNextitisbakedtoremovethesolvent“Exposure”involvesirradiatingcertainpartsoftheresinwithaparticularwavelengthoflightThemaskdeterminesthepartsoftheresistthatwillbeirradiated,andtherebythepatternthechipwillhaveWaferProcessingCont’dAfterexposuretolight,thewaferissprayedwitha“developer”monlyanaqueousbasesuchastetramethylammoniumhydroxide(TMAH)Followingthedevelopmentstage,thewaferis“postbaked”Atthispointtheportionsofthewaferthathavenoresistarefilledwithcopper,gold,orsomeotherconductivematerialThewaferisthencoatedwithalayerofSiO2andtheprocessisrepeated(upto15times)ResistSiliconWaferExposureStepDevelopmentStepCurrentMaterialsCresolandformaldehydearereactedtocreateanovolakresinThepolymerismaintainedinasolvent(usuallypropyleneglycolmonomethyletheracetate(PGMEA))pound(PAC)isusuallyadiazonaphthoquinone(DNQ)whichisaddedafterthepolymerizationAfluorine-basedsurfactantisalsoaddedwhichimprovesadhesionCurrentMaterialscont’dDNQ-basedresistscurrentlyareusedwith365nm(i-line)lightMajorityofthecurrentmanufactureofsemiconductorsiscarriedoutatthiswavelengthDeep-UV(248nm)resistscanproducecriticaldimensionsupto~m

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