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QFN封装技术简介ppt课件.ppt


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QFN封装技术简介ppt课件.ppt
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QFN封装技术简介样品外观名称解释QFN-QuadFlatNo-Lead即四面扁平无引线封装。-Microchipcarrier即微芯片载体封装。QFN也是CSP封装的一种类型。CSP-Chipscalepackage即芯片尺寸封装。一般定义为芯片面积占封装面积的80%municationproductsCellularphonesWirelessLANPortableproductsPersonaldigitalassistantsDigitalcamerasLowtomediumleadcountpackagesInformationappliancesLowprofile(<1.00.2L/F+0.7Mold)LightweightCosteffectiveSmallfootprintBetterelectricalperformanceBetterpowerdissipation结构特点封装考核标准PackageLevelMSLJEDEClevel330°C/60%,192hoursforPPFleadframe JDEEClevel185°C/85%,168hoursforCuleadframePCT121°C/100%/2atm,100hoursTCT-65°C~150°C,1000cyclesHTST150°C1000hoursHAST130°C/85%100hours封装类型与技术参数PkgsizeLeadcountPadsize(mm)Diesize(mm)Pitchsize(mm)QJA(c/w)0(m/s)1(m/s)2(m/s)3x316L12/161.80.53 0.270.50 0.5059.1 76.256.9 74.055.0 72.14x424L20/242.81.53 0.770.50 0.5032.2 40.729.9 38.428.1 36.55x532L32/283.01.73 0.870.50 0.5031.0 38.328.7 35.926.9 34.17x748L48/444.73.43 1.720.50 0.5023.5 27.120.98 24.619.1 22.78x856L52/565.74.43 2.220.50 0.5021.5 24.418.9 21.917.1 20.09x964L6.75.43 2.720.50 0.5019.7 22.117.1 19.515.3 17.10x1068L7.76.43 3.220.50 0.5018.1 20.315.5 17.613.7 15.8工艺流程Waferbackgrinding(Option)WafermountWafersaw/clean2ndoptical(Gate)LeadframetapingCuC194/NittoCRM-6250DieattachEpoxycureWirebondGoldwire:99.99%Au3rdoptical(Gate)MoldLeadframedetapingPostmoldcureTopsidelasermarkingElectrodeflash(Option)Plating(Option)Sn/PborSn/CuSingulationFinalvisualinspection(Gate)PackingTrayortube封装外形图符号解释A1Stand-offA2BodythicknesseLeadpitchOverallthicknessisthesumofA1andA2规格与尺寸PkgsizeLeadcountA1beD1E13312/160~0.050.90.54420/240~0.050.90.55528/320~0.050.90.555200~0.050.90.6566360~0.050.90.657744/480~0.050.90.577320~0.050.90.6577280~0.050.90.899640~0.050.90.599440~0.050.90.651010680~0.050.90.51212840~0.050.90.5几种工艺1单片-传统方法。2分离膜方式。3预贴膜方式
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