Tagore Technology Inc. 大功率RF开关 RF SWITCHES High Power RF switches typically use PIN diode circuits. Switches using PIN diodes have several disadvantages. Pin diode switches require a large bias voltage to handle high RF power. These circuits also require a large bias current to reduce the ON resistance of the PIN diode. Generation of a large voltage from lower battery voltage requires a boost circuit with many active and passive components. GaN switches are the new high performance alternative.
Antenna tuning and filter tuning devices require very low resistances and high voltage handling capable RF switches. Low ON resistance is necessary to increase Q and minimize loss of tuning circuit. High Q tuning circuits can experience very large voltages even at low transmit power. Our solution is ideal for Antenna Tuning, and Filter Tuning. HIGH POWER SWITCH PORTFOLIO – SYMMETRIC SWITCHES Part Number Package VDD Supply TS7225FK 2T 2T 2T 3T 4T 4T