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The Fundamental Mechanisms of the Absorption Process of Si During Rapid Thermal Process.pdf


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The Fundamental Mechanisms of the Absorption Process of Si During Rapid Thermal Process.pdf
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JournalofMaterialsScienceandEngineeringB2(10)(2012)517-522 TheFundamentalMechanismsoftheAbsorption ProcessofSiDuringRapidThermalProcess IvaldoTorreslCristobalVozandRamonAleubilla2 jlGrupoLOGOS,DepartamentoEETS,FacultaddeIngenier&sYArquitecturasUniversidadde Pamplona Bucaramanga,PamplonaNortedeSantander,Colombia 2·Departamentd'EngenyeriaElectr3nica,icadeCatalunyaC/GranCapit?~s/n,Campus Barcelona,Espa~a Received:AugustOl,2012/Accepted:September02,2012/Published:October252012 Km1 口口 Nord08074 Abstract:Thisworkpresentstheexperimentalprocedureofmeasuresin—situofthetemperatureofthesiliconwafersp-typewith thicknessof200lam,300lamand400gmusingtoIR-transmissiontohightemperatures.Thistechniqueisnewtothiswavelength (1.45gm)uracy.paredwith dataexperimentaltransmissionwithwavelengthof1.3pmand15/amofotherauthor.In-situtransmissionequipmentatanquartztube furnacecontainingofahighpowerHamamatsusmallangle(5。)IR-LED(L=7,850,九=1.45lam)binationwithaHamamatsu IR-sensorfG8370)andadigitallock.inamplifier. Keywords:Absorptioncoefficient,silicon,IR-transmission,temperature,interbandtansitionfreecarrierabsorption 1.Intr0ductiOn /n’situmeasurementofthesiliconwafertemperature duringsolarcellprocessingisadifficultmatterforhigh temperatureprocesssteps(>600。C).Pyrometryoften isusedbutcausesproblemssinceemissivitydepends onwafertemperature,dopingandsurfacefinishing, esstothewaferisoftendifficult.Alreadyin thebeginningofthe90’sin-situwafertemperature measurementbymonitoringtheinfrared(IR) transmissionintherangeofL 1.55umemittedbyan IR—laserwasproposedbySturm,etal-【1,2]asavery sensitivemethodinthetemperaturerangebetween 400—800。C[3].Alsoitwasusedtomeasuretheoptical absorptioncoefficienttohightemperaturesinsilicon crystalwithmeasurelessneartoinfrared[3].Because ofthestrongtemperaturedependenceofoptical absorptioninnearinfraredwave(九>1.0m),this COrresp0ndingauthor:IvaldoTorres,Ph.D.,associate professor,research fields:modeling,fabrication and characterizationofoptoelectronicdevicesandmacroporous silicon.E-mail:ivaldo.torres@unipamplona.edu.co. methodmakesitpossibletomeasurethewafer uracy【4,5】. However,atthattimesuitableinfraredlightsources anddetectorswithsufficientpower,resp.sensitivity, werestillunderdevelopmentandtherefore,very expensive,every popular.munication markethaschangedthissituationandhasmade available very sensitive but cheap infrared emission/detectorassemblies[6,7]. Hereiswillreportonresultsforthec-Siabsorption coefficientat1.45gmathightemperatures(upto 800。C1determinedfrom IR-transmissioninsitu measurements.Thisresultisreportedforthefirsttime forthiswavelength.Furthermore,wepresentresultsof thetemperatureresponsetimeofc-Siwafersonhigh speed temperature ramps for different peak temperaturesandwafersthicknesses.Fromthis,the totalthermalbudgetofannealingprocedurescanbe estimatedwhichisimportanttokeeplowtemperature passivationschemesworking. 518 TheFundamentalMechanismsoftheAbsorptionProcessofSiDuringRapi 内容来自淘豆网www.taodocs.com转载请标明出处.
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