液封直拉磷化铟单晶的湿法腐蚀研究.docx

液封直拉磷化铟单晶的湿法腐蚀研究.docx: .
液封直拉磷化锢单晶的湿法腐蚀研究
杨瑞霞1，陈爱华1，杨帆1,孙聂枫2,李晓岚2
(，天津，300401；
，石家庄050051) 摘要：采用原位磷注入合成法在富磷熔体中生长磷化锢(InP)单晶体材料，用两种腐蚀试剂对 掺S和掺Fe的单晶片进行研究，用自主配制的CH(CrO3/HBr)腐蚀液对(lll)In面InP晶片 进行腐蚀，取得了较好的效果。经过多次实验确定了(100)、(lll)P面InPAB腐蚀和InP(lll)In 面CH腐蚀的最佳腐蚀条件，清晰地观察到了 InP单晶中存在的线状蚀坑、环状蚀坑、位错 排和小角晶界等缺陷形貌，并对各种类型缺陷的形成机理进行了分析。
关键词：微电子学与固体电子学；InP；湿法腐蚀
中图分类号：
Micro-defect of LEC InP by Wet Etching Process
YANG Ruixiai, CHEN Aihuai, YANG Fam, Sun Niefeng2, Li Xiaolam
(1. School of Information Engineering, Hebei University of Technology, Tianjin 300401;
2. National Key Laboratory of ASIC ,The 13th Research Institute, CETC,) Abstract: Doped InP single crystals were grown in phosphorus-rich melt by in-situ phosphorous injection synthesis liquid encapsulated Czochraski (LEC) method. S-doped and Fe-doped InP wafer were studied by two kinds of etchants. (111) In InP wafer was etched by self-prepared CH (CrO3/HBr) etchant, And achieved good results. The best etching conditions for AB etchant and CH etchant were obtained by numbers of experiment. Kinds of microdefect were observed after etching, And formation mechanism of some types of defect was analyzed.
Key words: Microelectronics and solid-state electronics; InP; Wet Etching
0引言
我国稀散金属锢的储量居世界第一，锢的重要化合物InP具有抗辐射能力强、光电转换 效率高、热导率高等优良的性能，以掺Fe半绝