Ion Implantation离子注入.ppt

Chapter 8Ion Implantation
Hong Xiao, Ph. D.
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Hong Xiao, Ph. D.
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Objectives
List at least three commonly used dopants
Identify three doped areas
Describe the advantages of ion implantation
Describe major components of an implanter
Explain the channeling effect
Relationship of ion range and ion energy
Explain the post-implantation annealing
Identify safety hazards
Hong Xiao, Ph. D.
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Ion Implantation
Introduction
Safety
Hardware
Processes
Summary
Hong Xiao, Ph. D.
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Materials
Design
Masks
IC Fab
Test
Packaging
Final Test
Thermal Processes
Photo-lithography
Etch
PR strip
Implant PR strip
Metalization
CMP
Dielectric deposition
Wafers
Wafer Process Flow
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Introduction: Dope Semiconductor
What is Semiconductor?
Why semiconductor need to be doped?
What is n-type dopant?
What is p-type dopant?
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Introduction
Dope semiconductor
Two way to dope
Diffusion
Ion implantation
Other application of ion implantation
Hong Xiao, Ph. D.
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Dope Semiconductor: Diffusion
Isotropic process
Can’t independently control dopant profile and dopant concentration
Replaced by ion implantation after its introduction in mid-1970s.
Hong Xiao, Ph. D.
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Dope Semiconductor: Diffusion
First used to dope semiconductor
Performed in high temperature furnace
Using silicon dioxide mask
Still used for dopant drive-in
R&D on ultra shallow junction formation.
Hong Xiao, Ph. D.
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Dopant Oxide Deposition
Si Substrate
SiO2
Deposited Dopant Oxide
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Oxidation
Si Substrate
SiO2
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