600VCoolMOS优化设计.doc第32卷第2期
2009年4月
电子器件
Chinese Journal Of Electron Devices
Vol. 32 No. 2
Apr. 2009
Optimal Design of a CoolMOS with 600 Volts Breakdown Voltage
YANG Fan, QIAN Qi^song, SUN Wei-feng -
(National ASIC System Enginefring Research Center ♦ Southeast University • Nanjing 210096, China)
Abstract: CoolMOS has been proved io have excellent DC characteristics. In order to design a 600 V CoolMOS structure^ the structure of CoolMOS and the charge balance theory was used for analyzing the principle of high BV and low R®. Relative design parameter was get through theoretical calculations^ several parameters of the CoolMOS structure (EPl parametert implantation dose,cell size,diffusion time)have been optimized by the simulation of TCAD software. Finally, we got the CoolMOS structure while the BV of the structure was 630 V and the 尺说 of the structure was only 12. 5 mQ • cm 2. Characteristics of devices was greatly better than conventional power MOSFET.
Key words:CoolMOS? charge balance? device simulation; breakdown voltage; RonA
EEACC:2570
600 V CoolMOS优化设计
杨帆,钱钦松,孙伟锋*
()
摘 要:CoolMOS具有优越的覚流特性。为了设计出一个600V CoolMOS结宓•首先CoolMOS的结构入手•结合电荷平衡 理论,分析了其高击穿电压BV、低导通电阻心的原理。通过理论计算,得到用关的设计参数•并结合TCAD软件对Cool- MOS的多个参数(外延参数、注入刑量、单胞尺寸、推阱时间) V,持征导通电阻仅 为12. 5 mn - cmY的CoolM()S结构•器件特性大大优于传统功率MOSFET.
关键词:CoolMOS;电荷平衡;器件模拟;击穿电压;待征导通电阻
中图分类号:TN3
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