PLD脉冲激光沉积简介.docx

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英文原文：
CHAPTER 1
Pulsed Laser Deposition of Complex Materials: Progress Towards Applications
DAVID P. NORTON
University of Florida, Department of Materials Science and Engineering, Gainesville, Florida
INTRODUCTION
In experimental science, it is a rare thing for a newly discovered (or rediscovered) synthesis technique to immediately deliver both enhanced performance and simplicity in use in a field of accelerating interest. Nevertheless, such was the case with the rediscovery of pulsed laser deposition (PLD) in the late 1980s. The use of a pulsed laser as a directed energy source for evaporative film growth has been explored since the discovery of lasers [Hass and Ramsey, 1969; Smith and Turner, 1965]. Initial activities were limited in scope and involved both continuous-wave (cw) and pulsed lasers. The first experiments in pulsed laser deposition were carried out in the 1960s; limited efforts continued into the 1970s and 1980s. Then, in the late 1980s, pulsed laser deposition was popularized as a fast and reproducible oxide film growth technique through its success in growing in situ epitaxial high-temperature superconducting films [Inam et al., 1988]. The challenges for in situ growth of high-temperature superconducting oxide thin films were obvious. The compounds required multiple cations with diverse evaporative properties that had to be delivered in the correct stoichiometry in order to realize a superconducting film. Simultaneously, the material was an oxide, requiring an oxidizing ambient during growth. Pulsed laser deposition had several characteristics that made it remarkably competitive in the complex oxide thin-film research arena as compared to other film growth techniques. These principle attractive features were stoichiometric transfer, excited oxidizing species, and simplicity in initial setup and in the investigation of arbitratry oxide compounds. One could rapidly investigate thin-film deposition of near