声表面波器件微制造技术地研究论文.pdf

声表面波器件微制造技术研究学科:微电子学与固体电子学研究生签字: 王主\珲指导教师签字。≥1铜摘要近年来,随着MEMS技术和半导体技术的进步,电子器件正向着高集成度、低功耗和高速度方面发展。声表面波器件(Surface acousticwave,SAW)所使用的材料对器件的性能起着决定性的作用,本文对器件的材料石英和LiNb03分别和Si进行了键合技术研究,为了制作器件对键合片进行了减薄抛光,SOL和MATLAB对器件的性能进行了仿真、后续研究了器件的光刻技术。从本文的研究内容得到以下结论: ①通过选择一定波段的紫外固化胶,并在300—436nm曝光波长的曝光机下曝光, 制得了8mm×8mm键合片。分别实现了LiNb03以及石英和硅片的键合,。。键合片的中间键合层厚度为约3岫。②在声表面波器件的设计中,根据6函t模型的理论分析结合本实验对叉指换能器的参数进行了设计,,,制得本实验所需要的掩膜板。⑨SOL对设计的器件进行建立模型,分析了器件的波传播特性。在MATLAB上以LiNb03为基底,耦合模型对声表面波谐振器电学谐振特性的插入损耗和谐振导纳进行了仿真研究。④用设计制得的掩膜板做掩膜,在制得的键合片上经过涂胶、前烘、曝光、显影四个部分制得了光刻形貌较好的样品。经过试验得到前烘100℃(10min),, 显影时间40s用显微镜观察到最好的光刻效果,“rn。前烘100℃(10min), 曝光时问8s,显影时间40s得到线宽为21trn的最好光刻图案。关键词:微纳制造;键合;谐振器;仿真万方数据 Study on theMicroManufacture Technology fortheSAW Devices Discipline:Microelectronics Student Signature: Supervisor Signature: 泓吁批U叼厶’力彬形,’p Abstract In recent years,ponents are developing toward hilgh integration, low-power-loss andhi曲一speed wim thedevelopment ofMEMS and semiconductor technology. The materials ofSAW devices play adecisive roleinproperties and LiNb03 bonded with Sirespectively、析m bonding technology,and the bonded wafer were polished toreduce the thickness ofthe simple devices was designed and the performance ofthe device was simulated SOL and lithography technology of thedevice isresearched mainly resultswere asfollows: ①The 8mm×8mm bonding出pS were obtained by selecting acertainwavelengths of UV curing adhesive,and exposing with300—436nm wavelength ofexposure LiNb03 and quartz、^rith maximum shear forceWas measured with shear force testmachine and the fracture energy ofLiNbOs bonding chips Was J/m2measured bycrack—opening shows thatthe thickne?of the middle1ayer was about 3microns. ③During thedesign ofSAW device,designed theparameters ofIDT according