GLSI多层铜布线CMP后BTA去除研究.pdf

Vol. 36, No. 6 Journal of Semiconductors June 2015
Benzotria13), which will
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It is well known that chemical mechanical planarization jeopardize the performance of low-k dielectrics and may also
(CMP) of copper is a vital process for the fabrication of multi- induce metallic ion contamination due to KC and CsC. There-
layered copper interconnections in giga large scale integration fore, development of a low-cost and environmentally-benign
(GLSI)Œ1. However, the CMP process leaves a lot of resid- cleaning solution for effective removal for BTA is highly de-
ual contaminants such as organic residues, abrasive particles sirable. Our research group has previously reported an effective
and metallic contaminants on the copper surfaceŒ2. The or- alkaline chelating agent for BTA removal. In this work, based
ganic residue is mostly BTA, which must be removed through on previous work, we investigated a synergetic effect of FA/O
Œ2 5 II chelating agent and FA/O I nonionic surfactant on BTA re-
the post-CMP cleaning process
. BTA is the most com-
mon corrosion inhibitor used in Cu CMP slurries. BTA makes moval.
the surface highly hydrophobic in nature, which causes severe