涂料工业hd-i三聚体改性水性聚氨酯复合分散体的研究.pdf

Advanced Materials Research Vols. 152-153 (2011) pp 752-755
Online available since 2010/Oct/27 at
e. However, the semiconducting properties of SnS thin films still need
to be improved in order to make good SnS thin film solar cells. Doping can improve the
semiconducting properties of the films. W. Albers et al. [4] investigated Sb- and Ag-doped SnS single
crystals and observed n-type conductivity with carrier concentration of ~10 19 cm −3 in Sb-doped SnS
crystals and p-type conductivity with ~10 18 cm −3 concentration in Ag-doped SnS crystals. Devika et
al. [5] investigated Ag-doped SnS films grown by thermal evaporation technique and observed that
the resistivity of the SnS layers reached a minimum value of •cm at 15 atom ％ of Ag. But some
properties of SnS:Ag thin films are unclear and waiting for further study. We ever reported the effect
of anneal temperature on SnS:Ag thin films and obtained that the SnS:Ag film annealed at 260 had
the best properties[6]. In this paper we investigate the influence of annealing time on the films in
order to obtain SnS:Ag thin films with good photoelectric properties.
Experimental
SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation technique
successively. The thermal evaporation system is DMDE-450 deposit