高温压力传感器研制.pdf

河北工业大学硕士学位论文

高温压力传感器的研制

摘要

高温压力传感器是指在高于 125℃环境下能正常工作的压力传感器。在众多压力传感
器中,高温压力传感器因其特殊的高温应用环境而日益受到人们的重视,典型应用于石油,
化工,冶金,航空航天等领域。
论文介绍了多种高温压力传感器的现状,对它们的基本结构、工作原理、特点进行了
论述。系统论述和研究了多晶硅压力传感器的原理和设计。多晶硅压力传感器在氮化铝层
上淀积多晶硅膜,既利用了硅优良的机械特性,又保证了力敏电阻与衬底间良好的绝缘性,
大大提高了器件的温度特性。多晶硅压力传感器工作温度可超过 300℃,制作工艺简单,
与集成电路工艺兼容,成本低,适于批量生产。
论文利用有限元分析方法,借助 MARC 软件,模拟了传感器承压弹性膜的应力场分布,
确定了多晶硅力敏电阻条的位置和排列方式。然后在理论分析的基础上,介绍了每个参数
的设计过程,对此传感器芯片的膜片尺寸、电阻条和版图进行了设计。采用半导体平面工
艺制作压力传感器的芯片,芯片采用各向异性腐蚀工艺进行加工。在硅杯背面制备过渡层,
然后用低温玻璃焊料将芯片与陶瓷基座封装在一起,制成耐高温压力传感器。
多晶硅-AlN 薄膜结构的压力传感器制作工艺与传统的 CMOS 制作工艺兼容,易于实现
集成化,所以这是一种性能理想的高温压力传感器。

关键词:压力传感器,多晶硅,直流磁控反应溅射,芯片封接技术,有限元
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高温压力传感器的研制
THE DESIGN OF HIGH TEMPERATURE PRESSURE
SENSOR



ABSTRACT


High temperature pressure sensors refer to those sensors whose working temperature is
higher than 125℃.Among all the pressure sensors,the high temperature pressure sensor were
paid high attention to because of their excellent working performance at high
applications are found in petroleum, chemical industry, aeronautics and
astronautics.
The research status on several kinds of high temperature pressure sensors is introduced in
the thesis. The principle and design of the polysilicon pressure sensor is discussed in
polysilicon high temperature pressure sensor’s temperature stability is greatly improved by
depositing a poly-silicon film on the layer of AlN, which has both good mechanics of silicon and
excellent insulation property between force sensitive resistors and pared with
doped mono-crystalline silicon pressure sensor,polysilicon pressure sensor shows great
advantages at 300℃ operating of simple manufacture techique, compatible
with the integrated circuit fabrication, and low cost, the sensor can be easily mass-produced.
Under the guide of Finite-Element Analysis (FEA) theory, we simulated the stress
distribution on silicon membrane by using MARC software.