atomic layer etching by gas cluster ion beams with acetylacetone noriaki toyoda参考-匠人.pdf

该【atomic layer etching by gas cluster ion beams with acetylacetone noriaki toyoda参考-匠人 】是由【抱琴】上传分享，文档一共【6】页，该文档可以免费在线阅读，需要了解更多关于【atomic layer etching by gas cluster ion beams with acetylacetone noriaki toyoda参考-匠人 】的内容，可以使用淘豆网的站内搜索功能，选择自己适合的文档，以下文字是截取该文章内的部分文字，如需要获得完整电子版，请下载此文档到您的设备，方便您编辑和打印。JapaneseJournalofAppliedPhysicsREGULARPAPERAtomiclayeretchingbygasclusterionbeamswithacetylacetoneTocitethisarticle::02JapaneseJournalofAppliedPhysics58,SEEA01(2019)REGULARPAPERhttps:///-4065/ab17c5AtomiclayeretchingbygasclusterionbeamswithacetylacetoneNoriakiToyoda*andKotaUematsuGraduateschoolofengineering,UniversityofHyogo,2167Shosha,Himeji,Hyogo,671-2280,Japan*E-mail:******@-,2018;acceptedMarch27,2019;publishedonlineMay30,2019Atomiclayeretching(ALE)ofmetalsusinggasclusterionbeams(GCIBs),theenergy/atomsorenergy/moleculescanbeeasilyreduceddowntoseveraleV,,GCIBcreatesthetransienthigh-temperatureandhigh-pressureconditiononatargetsurface,,,acetylacetone(acac)--GCIBirradiation,etchingformetals(Cu,Co,Ni,Ru,Ta)arealsoenhancedbytheadditionofacacduringO2-.?,ALEofCu?--of-the-artandthree-dimen-sionalsemiconductordevices,,?gurationoftheO2-GCIBetching(ALE)–4))High-sequentialstepsofadsorptionofreactivemolecules,evacua-pressure(～1MPa)O2gasissuppliedinanozzletoformtionofresidualgas,--limiting,),-,ionirradiationsareapro-?xedat1μA·cm?,,ingeneral,monitoredwitharesidualgasanalyzer(RGA300,StanfordionenergyintheremovalstepisseveraltensofeV,whichisresearchsystems).Quartzcrystalmicrobalance(QCM,In?con),Cu(<10eV).Therefore,ionbeaminduceddamagemightbe??)measuredwitharatemonitor(IC/5,In?con)sothatareal-,thereisa6–8)ionbeam(GCIB)---GCIBswithsharedbythousandsofgasatomsormolecules,energy/?rst,theacacvaporisintroducedintheorenergy/)Asirradiationchamber,andthemetalsurfaceisexposedtothearesult,low-damagesurfacemodi?(Tacac).Partialpressure?3low-energyirradiationofGCIBiswidelyusedforlow-ofacac(Pacac)is6×°C(coolingwatertemperature).AfterTacac,thevalveforX-rayphotoelectronspectroscopy(XPS),residualacacvaporisevacuated10–13)massspectroscopy(SIMS).Inaddition,sincegasclusterfor180s(Tevac).AfterTevac,theshutterforO2-GCIBisopened14)ionsdepositdenseenergyonatargetsurfacewithoutforacertaintime(TGCIB).Themetalsurfacewithadsorbedseveredamage,chemicalreactionsareenhancedatalowacacisirradiatedwithO2-–17),surfacereactionen-(Va)oftheO2-,theshutterhancementwithoutseveredamageisexpected,,?nedasetchingperInthepreviouspaper,wehavereportedtheALEofCucycle(EPC).TheetchingdepthofCumeasuredonQCMwas18)?lmswithO2-,weemployedacetylacetone(acac)vaporasanpro?ler(Dektak3,Veecoinstruments).-?uoro-(hfac)–22)Inthisstudy,etchingeffectsbyAt?rst,theetchingeffectsofblanketCu?lmsbycontinuouscontinuousGCIBirradiationwithacacvaporareexploredforO2--1?,SEEA01(2019).(Coloronline)SchematicdiagramofO2-.(Coloronline)TimediagramofGCIB-?2pro??uenceofO2-GCIBwas1×10ions·-GCIBonly,-GCIBirradiation(2eV/molecules).,20nmofCu?lmswasetchedby5kVO2-(CuOx)(hexa?uoroacetylacetone(hfac),acac,aceticacidandformicacid).25)Inourexperiment,.(Coloronline)AccelerationvoltagedependenceofCuetchingAr-,thedepthbycontinuousO2-,itwasfoundthatthemodi?ed26)elerationvoltage(Va)?lmsonSisubstratesbycontinuousO2-GCIBcaseofVaof20kV,thereactionbetweenthickCuOxandirradiationwithorwithoutacacvapor(O2-GCIBonly)duringacactogetherwithphysicalsputteringofCuOxalsoenhancesSEEA01-2?,SEEA01(2019).(Coloronline)-,thereactionbetweenCuOxwith5and20kVO2-GCIBirradiationandtheacacadsorp-,acacvaporwasevacuatedbeenabletodetecttheetchingproductordesorbedmaterialsfor180s(Tevac),then,O2-GCIBirradiationwascarriedoutbyO2-GCIBirradiationwithacacadsorption;thisinforma-for240s(TGCIB),however,therewasnosigni?,Tacacwas?(Pacac),itcanbeobservedthatCuthicknessdepthbyO2-GCIBwithacac,theetchingdepthsaturateddecreasedrapidlyatthebeginningof20kVO2-GCIB?3aroundPacacof4×-GCIBirradiation,whichcanbeexplainedbythesurfacereaction?2currentdensitywas1μA·cm,the?:,theetchingrateofCubecameconstant(lineartoexecutetheALEexperimentinthesaturatedadsorptiondecrease),urred?3conditions,Pacacwas?xedat6×,theetchingrateofCuOxisobservedinNext,theetchingdepthofCu?,whenVawas5kV,CuO2--GCIBshowsthetimedependenceofCuthicknessonQCMbyirradiation,however,CuetchingratebecamealmostzeroO2---GCIB.?,etchpercycle(EPC)-GCIBwasclosedinitially,-,--irradiationswereobservedforvariousmetals(Cu,Co,Ni,,Ta).Wehavereportedetchingofvariousmetalsusedintheshutter,,28)Inthis5kVO2-,theCustudy,weapplymetaletchingbyO2-GCIBirradiationwiththicknesslinearlydecreasedinthecaseof5kVO2-,Co,Ni,Ru,?lmswith5and20kVO2-GCIBwithorwithoutwiththatobtainedfromtheblanketCu?,?uencewas1×1016ions·cm?-?lms,,theslopebecametheintroductionofacac,-GCIB,there?lmsonQCMwith20kVO2-,theetchingenhancementfactorbyadditionofacacNow,-adsorptionofacacvaporduringO2--(forCu),17Next,ALEexperimentsusingacacvaporandO2-GCIB(Co),(Ni),(Ru),,itwasSEEA01-3?,SEEA01(2019).(Coloronline)TimedependenceofCuthicknessbyGCIB-ALEwithacac(5and20kVO2-GCIB)(Tacac=10s,Tevac=180s,TGCIB=240s).andreal-timeCuthicknessmeasurementalsocon?rmstheALEofCuby5kVO2--GCIBwas2eV,,,.(Coloronline)Etchingdepthofvariousmetalsbycontinuous16?2O2-GCIBirradiationwithacac(Va=5,20kV,1×10ions·cm).1),,,,,,,,,020802reportedthattheetchingenhancementforaCo?lmby1keV(2015).Ar+)Asexplainedbytheprevious2),,,,,,8paper,,,,,184430)(1990).,3),,,,,,,N5005(2015).-4),ACSNano10,4889(2016).9eshigh-temperatureandhigh-pressure5),,,.,4814(2018).conditioninashortdurationtime,theetchingreactionmight6),,,