磁控溅射法制备非晶硅薄膜及其晶化分析.docx

Study of amorphous silicon film prepared by ron sputtering and its crystallization property
Shiyu Luo
Directed by: Shengming Zhou
Abstract
As the ever increasing prices of oil and natural gas, the renewable energy resources, especially solar energy, have been attracting more and more attention internationally. With the further research into solar cell, people put a great deal of energy on thin film solar cell. Comparing with other thin film solar cell, polycrystalline silicon thin film solar cell have a lot of advantages: Not only does it have photosensitive to the long-waved light, absorb visible light efficiently, but also have rather high efficiency, which can parison with crystalline or polycrystalline silicon. Meanwhile, it has easy material preparation technology, low cost and long life without S-W effect. So polycrystalline silicon thin film solar cell will be the most promising candidate of the novel solar cell. And preparing high quality, low cost polycrystalline silicon thin film is considered as the development orientation of solar cell.
In the paper, amorphous silicon thin films were prepared by ron sputtering, and then they were crystallized by the method of conventional furnace annealing and metal-induced crystallization separately. Finally, the silicon thin films before and after crystallizing were investigated by Laser Raman Spectra, SEM, XRD and ultraviolet-visible spectrum.
The result of conventional furnace annealing shows that: During the increase of substrate temperature, Raman scattering peaks have an obvious blueshift, peaks of XRD e sharp, surface appearance e crude, optics bandgap e narrow. It shows extent of crystallization e deeper. Increasing crystallization temperature of film, we find Raman scattering peaks approach 520cm-1 gradually; XRD e much sharper, presenting Si particular peaks; surface appearance
e much cruder; optics bandgap approach crystalline silicon’s bandgap. It shows amorphous silicon thin film has transformed to p