cmos数字集成温度传感器的研究与设计-微电子学与固体电子学专业毕业论文.docx

硕士学位论文
Abstract
In this paper,the developing history,present situation and trends of temperature sensor and CMOS integrated temperature sensor were dominance and properties of the CMOS integrated temperature sensoi were also described,and the research meaning was pointed temperature related model and the
influencing factor of two temperature sensing devices,subthreshold MOSFET and PNP substrate transistor,based on CMOS process were analyzed pared,and pointed out that the PNP substrate transistor was more fit for being the temperature sensing to parison of the types of the CMOS integrated
temperature with the properties of∑一A converter type and duty—cycle·modulated type,a new framework of low power consumption CMOS temperature sensor was temperature sensing circuit,one order∑一A modulator and digital low pass filter were current-output mode was adopted in the temperature sensing to the theory of the bandgap reference,A PTAT current generator was designed,and the PTAT current was as the initial signal which related to the traditional bandgap reference circuit was improved in the design,which includes the applying of self-bias structure
and cascode using the improvement method,we obtained low power
linear and high PSRR PTAT current generator,which in a simple circuit ∑·A modulator was also improved against the current input signal was designed incorporated with the forestage bandgap self-bias of the bandgap circuit was used as the bias of the two ’S open loop gain was over 1 00dB,and it also has low power and high voltage reference generator was the expansion of the bandgap circuit for saving the nonlinear output of the modulator was calibrated by using the aid of the Matlab,and obtained a group of subsection linear digital low pass