靶基距对反应溅射AlN薄膜微结构和性能的影响[1]（精选）.pdf

光电子· 激光
第卷第期年月
23 8 2012 8 Journal of Optoelectronics·Laser August 2012
靶基距对反应溅射AlN薄膜微结构和性能的影响
王进李翠平杨保和张庚宇尹涛涛苏林
, , *, , ,
天津理工大学天津市薄膜电子与通信器件重点实验室天津
( , 300384)
摘要采用射频磁控反应溅射法在基底上制备了氮化铝薄膜利用射线衍射
: (RF) Si (AlN) , X
傅立叶红外光谱扫描电子显微镜和纳米力学测试系统研究靶基距对
(XRD)、(FTIR)、(SEM)
薄膜取向性微结构形貌和力学性能的影响结果表明靶基距较大时形成的薄膜为
AlN 、、。, , AlN
非晶态薄膜表面较疏松随着靶基距的减少薄膜变为多晶态且具有择优取向随着
, ; ,AlN , (100) ;
靶基距的进一步减少薄膜结晶质量变好晶粒变大薄膜变得更致密择优取向也由逐渐向
, , , , (100)
转变靶基距较小时压电薄膜与基底结合得更牢固而压电薄膜与基底结合的紧密程
(002) ; ,AlN ,
度对多层膜声表面波器件性能优劣的影响至关重要
(SAW) 。
关键词氮化铝薄膜靶基距射频磁控择优取向
: (AlN) ; ; (RF) ;
中图分类号文献标识码文章编号
:O484 :A :1005-0086(2012)08-1519-06
Effect of target-substrate distance on the microstructure and prop-
erties of AlN film
WANG Jin,LI Cui-ping,YANG Bao-he* ,ZHANG Geng-yu,YIN Tao-tao,SU Lin
(Tianjin Key Laboratory of Film Electronic munication Devices,Tianjin University of Technology,Tianjin
300384,China)
Abstract:AlN films were deposited on Si substrates using radio frequency(RF)ron sputtering.
The orientation,microstructure,morphology and mechanical properties of the films were characterized by
X-ray diffraction(XRD),scanning electron microscope(SEM),Fourier transform infrared spectroscopy
(FTIR)and results show that the deposited AlN films are transformed from non-
crystalline to polycrystalline and the crystal quality is improved w