宽带CMOS LC压控振荡器设计及相位噪声分析 图文.doc

宽带CMOS LC压控振荡器设计及相位噪声分析_图文万方数据万方数据WidebandCMOSLCVCOdesignandphasenoiseanalysis435inganalysis,Eq.(7isconsideredasafunctionofW/L。。ffwhichcorre-spondstotheminimumnoise—,thetankoutputsignalisas—sumedas坼=Acos(咖VN=一Acos4,(8ThetransconductanceofMIandM2areg。I=Kn(Ks+Acos4,一yTH=KA(cos4,+—Vos百-V—nI-KnA(c。s咖一c。s西(9g帕=K。A(一cos4,一cosqb(10where(%s一‰IA=…一s(毕詈≤中≤订(11Becauseg。l≥0,cos4,≥costlbmustbesatisfied,we,thus,have一西≤西≤—gle,,Eq.(es咖==4kTyg。I=4kTTKA(cos妒一cos40=i:0a(tp2(12whereFi,a,(妒=一sln妒ig瓦m2(13一fj:o=4kTTKA口(西=,/—cos,/,-—cosOSubstitutingEq.(5intoEq.(14,wehave石施枷2瓦瓮最肌A2SubstitutingEq.(15carrierpowerratioAnd(14rL。.。仟=46sin如..,os4—17cos2qbsin中+16sinqb+(18SubstitutingEqs.(5,(11andcorrespondingtechnologyparametersintoEq.(I8,itcallbeprovedthatthenoise—car-rierpowerratioisafunctionofW/L。,-—',/L。。ofNMOSaround90,:l,W/,.(18,厂。。.(14石:4kTTKA∞rW(194。—carrierpowerra-tioisindirectproportiontoW/L。,theminimumnoise・carderpow一(。.(7,weobtainthenoise-4Measurementrenoi”筐挚%‘”‘’“ThecircuitisrealizedwithTSMC’.(×.