氧化钒薄膜的制备光电特性及研究.pdf

天津大学硕士学位论文氧化钒薄膜的制备与光电特性研究姓名:后顺保申请学位级别:硕士专业:微电子学与固体电子学指导教师:胡明 2011-12 。这使得它在光开关、激光防护和红外探测等方面有着广泛应用。本论文采用相同的磁控溅射工艺在si基底上制备了氧化钒薄膜,并辅以快速退火工艺对薄膜样品进行热处理。快速退火工艺是降低二氧化钒薄膜制备时间的重要方法,其对氧化钒薄膜的性能有重要影响,为了获得快速热处理工艺对氧化钒薄膜性能的影响规律,首先利用磁控溅射方法在Si基底上制备氧化钒薄膜,保持所有样品的制备工艺条件相同,然后在不同的热处理工艺下进行快速处理;利用原子力显微镜、X光衍射仪、四探针测试仪和THz时域频谱仪对热处理前后氧化钒薄膜的性能进行了测试。结果显示当退火时间一定时,随着退火温度的提高氧化钒薄膜的颗粒大小增大,但晶粒大小变化并不明显;当退火温度一定时,随着退火时间变长,薄膜中的晶粒和颗粒大小均有所变大。。C范围内,样品(450。C/15s)没有热致光电相变;样品(500。C/15s、550℃/15s、500℃/10s和500。C/20s)均表现出良好的热致电学相变特性和对THz的调制作用。样品(550℃/15s)的相变温度点比其他样品的要低,说明退火温度的提高使得相变温度发生了改变。而样品(500℃/10s)的热致相变幅度要比其他相变样品的要高。说明随着退火时间的延长相变幅度有变小并逐渐趋于稳定的趋势。另外,热致电学相变温度点与热致光学相变温度点并不一致,后者比前者要高。在532nm的绿激光激励下,未退火和结晶时择优取向不佳的氧化钒薄膜样品对THz的调制作用比那些有着优良热致相变特性的样品要好。美糊:氧化钒,薄膜,磁控溅射,,THz调制 ABSTRACT Vanadium Oxide thinfilmshave excellent thermal—induced and photo-induced phase transition,and phase transition could occur under thermal excitation oroptical thispaper,the same vanadium oxide thin films with Sisubstratewere fabricated byfacing ron SpuRer,and then some differentRapidThermalAnnealing(RTA)process conditions were employed to order tostudy theinfluence of differentRTA conditions onthe surface geography,crystallization,electrical and optical functions ofthe films, Atomic Force Microscope(AFM),X-Ray diffraction(XRD),Four Probe Meter and THz timedomain spectroscopy(THz-TDS)were used todetectallkinds ofvariations· The resultsindicated thatparticles ofthesamples grow up butcrystalgrains almost have no change as theRTA temperature increases(RTA timefixed);both particles andcrystal grainsgrow up astheRTA timedelays(RTA temperature fixed). Inthetemperature cycles 。C, Sample(450。C/15s)has no electricalandoptical phase transition,the resistivityand THz transmission ofSample(500。C/1 5s), sample(550。C/15s),Sample(500*C/10s)and Sample(500。C/20s)have huge change around thephase thephase transitionpoint ofsample(550。C/15s