在抗坏血酸存在下用掺杂有纯碳纳米管的电沉积导电聚合物PEDOT检测多巴***
姓名:孙月昕
学号:1002014024
专业:分析化学
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医学PPT
摘要
基于掺杂有纯碳纳米管(CNT )的电导电性高分子(聚乙烯二氧噻吩)( PEDOT)开发一种具有高度稳定的和高灵敏度的电化学多巴***(DA)的检测的传感器。将掺杂有唯一掺杂剂碳纳米管的PEDOT / CNT纳米复合物通过的PEDOT的电化学聚合沉积在碳糊电极上。采用循环伏安法和微分脉冲伏安法对碳糊电极上的PEDOT / CNT薄膜的电化学性能进行了表征。在PEDOT / CNT(聚乙烯二氧噻吩/碳纳米管)膜测定DA的氧化还原反应表现高的电催化活性,而且DA的氧化还原峰电流的峰值与修饰电极相关的多巴***浓度有关。一个灵敏的DA传感器是基于此优异的催化性能而发展的,~20μm,检测极限为20nM。这种传感器容易制得,非常稳定且可重复使用,并且不受抗坏血酸的干扰(存在的浓度比DA高1000倍),所有这些都使得它成为一种很有前途的检测DA的技术。
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Fig. 1. Cyclic voltammograms of (a) the bare CPE, (b) the CNT/CPE, (c) the PEDOT/PSS/CPE and (d) the PEDOT/CNT/CPE in M pH B-R buffer solution containing mM DA. The scan rate is 100 mVs-1.
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医学PPT
Fig. 2. SEM images of PEDOT/PSS (top) and PEDOT/CNT (bottom) modified CPEs.
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Fig. 3. Dependence of the cyclic voltammogram of mM DA at the PEDOT/CNT/CPE on the scan rate. 1–15 correspond to the scan rates of 20, 40, 60, 80, 100, 120, 140, 160, 180, 200, 220, 240, 260, 280, 300 mVs-1. Insets: Plots of the Ip versus and ½ at the PEDOT/CNT/CPE, respectively. (a) Ipa~v ; (b) Ipc~v; (c)Ipa~v½; (d) Ipc~v½.
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Fig. 4. Cyclic voltammograms of mM DA at the PEDOT/CNT/CPE in M B-R buffer solution with various pH. The pH values for CV curves 1–6 are , , , , and , respectively. Scan rate: 100 mV s-1. Inset:the plot of the oxidation peak potential vs. pH.
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医学PPT
Fig. 5. DPV curves of the PEDOT/CNT/CPE in (a) pH B-R buffer solution, with the addition of (b) mM AA, (c) 25uM DA and (d) 25uM DA + mM AA.
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. DPV curves of DA at the PEDOT/CNT/CPE in the presence of mM AA in pH B-R buffer solution. Curves a–h correspond to the concentrations of , , , , , 13, 16 and 20uM, respectively. Inset: plot of the DPV current versus the concentration of DA. Error bars represent the standard deviation of 3 measurements.
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医学PPT
结论
用基于导电聚合物纳米复合材料PEDOT / CNT改性的CPE对DA的检测灵敏
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