Power Semiconductor Devices Robin Giese Princeton University EE341 12/14/2000 Requirements for power devices • Primarily on/off control of high-I/V vs. amplification – several 1000V, peak currents 3000A – reverse breakdown voltage important for reliable OFF state • effective switching – low ON state drop voltage (I=V/R) – high current density – low driving current • basic devices: (Power-) BJT, MOSFET – BJT: requires high gate current for both ON and OFF – MOSFET: somewhat more difficult to make Topics covered • Requirements • Silicon Controlled Rectifier • lighting control • Insulated Gate Bipolar Transistor • High power device challenges • Manufacturing challenges p-n-p-n diode •3 states: – reverse blocking – forward blocking – forward conducting – device pops from forward blocking to forward conducting state – device recovers from conducting state to forward or reverse blocking states after V is released p-n-p-n diode: fwd blocking • Separate diodes: forward, reverse, forward bias • p-n diode: holes from p → n, e from n → p, supplied from ohmic contacts • p-n-p-n J1: hole from ohmic contact on p1 wants to cross to n1, needs e to ‘exchange’ with n1 to maintain space charge neutrality • n1 has no ohmic contact, J2 in reverse bias, no e can be supplied → no current p-n-p-n diode in reverse blocking • Separate diodes: reverse, forward, reverse bias • J2 could conduct: holes from p2 to n1, etc. • However, no supply of holes from n2 through reverse-biased J3 → again, no current p-n-p-n diode leakage • Go back to forward bias: J1/J3 forward biased, J2 reverse-biased • Recall: p1 is waiting for e e from n1 through J1, but n1 has no e supply • However: thermal EHP generation at J2 gives e to n1, hole to p2 → small leakage current • Sample applies to p-n-p-n in reverse bias p-n-p-n forward conduction state → holes → ← E ← →→ Vrv •J2 in reverse bias -> depletion region ext
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