溅射功率对MgZnO薄膜晶体管性能的影响.pdf

第 卷 第 期 吉 林 建 筑 大 学 学 报
38 1 er, MgZnO thin film transistors were fabricated on Si substrates by radio frequency magnetron
sputtering. The influence of different sputtering powers on the electrical properties of MgZnO thin film transistors was
studied. The prepared devices were tested by Keysight B1500A semiconductor parameter instrument. Its electrical
properties are calculated and analyzed through formulas. Atomic Force Microscope( AFM) and Scanning Electron
Microscope( SEM) are used to detect the surface morphology of the films. The experimental results show that differ-
ent sputtering powers have an impact on the performance of MgZnO thin film transistors. When the Mg target sputte-
ring power is 3W, the electrical performance and film quality of the device are the best, the current switching ratio is
7
1. 54 × 10 , the threshold voltage is 24V, The subthreshold swing is 1. 1V / decade, the interface defect state density
12 - 2 - 1
is 3. 82 × 10 cm · eV , and the atomic percentage( at. % ) is 1. 54 respectively. The root mean square roughness
( RMS) of the MgZnO film is 1. 168nm, the roughness value is the lowest.
Key words:
MgZnO thin film transistor; sputtering power; Mg doping amount
引言
0
近年来 基 由于具有稳定性好 迁移率