射频溅射法制备氢化纳米硅薄膜.pdf

上海交通大学
硕士学位论文
射频溅射法制备氢化纳米硅薄膜
姓名:赵百川
申请学位级别:硕士
专业:光学工程
指导教师:崔容强;孟凡英
20040101
上海交通大学硕士研究生毕业论文
射频溅射法制备氢化纳米硅薄膜
摘要

纳米科学技术 Nano-ST 是研究由尺寸在 ~ 100nm 之间的物质组成的
体系的运动规律和相互作用以及可能的实际应用中的技术问题的科学技术纳米
材料是纳米科技领域最富有活力研究内涵十分丰富的学科分支然而在诸多纳
米材料的研究中由于半导体材料的特殊地位纳米硅薄膜 nc-Si:H 材料具
有的量子尺寸效应,其电学和光学特性研究又为人们广泛关注,它在半导体,通讯
和医学等领域具有广泛的应用前景
本研究采用射频溅射法制备了氢化纳米硅薄膜通过原子力显微图像 X 射
线衍射拉曼谱测试以及电学性能测试深入讨论了纳米硅薄膜的生长机制微
观结构光学和电学特性通过测试分析薄膜的结构及性质主要与工作气体的
成分和气压有关随着工作气体中的氢气含量增加氢化纳米硅薄膜的晶化度有
所增大晶粒尺寸也变大随着沉积时间增加薄膜厚度增长的同时膜内晶粒
的晶向趋于无序化
从理论上讨论了制作纳米硅太阳电池的薄膜成分及结构特点低晶化度
的纳米非晶硅薄膜晶化度 30 作为太阳电池的吸收层系统阐述了异质结
太阳电池的工作原理提出一种新的纳米硅薄膜电池结构渐变结纳米非晶硅
薄膜电池通过调节薄膜生长条件和掺杂比例控制薄膜晶化度和导电类型从
而调节材料光学带隙有望避免突变结产生的复杂界面态提高电池的开路电压
关键词射频溅射氢化纳米硅渐变结
1
上海交通大学硕士研究生毕业论文
Abstract

Nano-material posed of grains which size ranges from to 100nm. The
hydrogenated nano-silicon (nc-Si:H) system is being extensively studied. The nc-Si:H
films are quantum confinement system, which posed of nano-silicon and
amorphous silicon tissue. It was reported that nc-Si:H films have very promising
electronic and optical properties, and its application is very extensive in many fields
including semiconductor devices, communication, medicine fields and so on.
In this paper, we prepared hydrogenated nano-silicon film by RF sputtering, and
microstructure and properties of nc-Si:H film were discussed by AFM, XRD, Raman
spectrum and XPS etc. We found that the structure and properties of the nano-film
were controlled by position and pressure of the work gas. As the rate of PH to
Ptotal increased, the crystallization rose and the size of crystalline grain was getting
larger. In addition, the thickness of the film increasing if prolonging the deposition
time, as a result, the orientation of the grains in the film became disorder.
We discussed the characteristics and structure of nc-Si:H film in theory, and
developed a model of solar cell. In the model we consider that the film which
crystallization is