射频磁控溅射法制备硼薄膜.pdf

火工品
2013 年 02 月 INITIATORS & PYROTECHNICS 2013 年第 1 期

文章编号:1003-1480(2013)01-0005-05


射频磁控溅射法制备硼薄膜
刘玉杰,胡艳,杨程,叶迎华,沈瑞琪,李创新
(南京理工大学化工学院,江苏南京,210094)

摘要:采用射频(RF)磁控溅射技术在单晶硅(Si)基底上制备了硼(B)薄膜,研究了工作气压和溅射功率对薄膜沉
积速率及薄膜质量的影响,并对薄膜的微观形貌和组成成分进行了表征。结果表明:当气压为 时,B 薄膜的沉
积速率最大;沉积速率随溅射功率的增大而增大;在 、150W 条件下制备的 B 薄膜比较平整、均匀、致密;B 薄
膜的主要构成为晶态的 B,存在少量的 B2O3。
关键词:硼薄膜;射频磁控溅射;制备;形貌表征;成分分析
中图分类号: 文献标识码:A

Preparation of Boron Film by RF-ron Sputtering
LIU Yu-jie, HU Yan, YANG Cheng, YE Ying-hua, SHEN Rui-qi,LI Chuang-xin
(College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, 210094)

Abstract:Boron film was essfully deposited on the substrate of silicon by means of RF-ron sputtering process.
The effects of sputtering power and sputtering pressure on the deposition rate and the quality of films were studied, and the
morphology position of B film were investigated. The results showed that the deposition rate of B film came to a peak
value at the pressure , and increased almost linearly with the increasing sputtering power. The B film was smooth, uniformly
pact under the condition of 150W sputtering power and pressure, and the B film mainly consist of elementary-
crystal B, while a little B2O3 exist.
Key words:B film;RF-ron sputtering;Preparation;Morphology position analysis