8寸单晶硅片规格.doc

8?单晶硅片技术规格 156 × 156Mono-crystalline Silicon Wafer Specification 类型 Type 晶体生长方式 Crystal Growth Method CZ 型号 Conductance TypeP 性能 capability 电阻率(Ω? cm) Resistivity ~ 氧含量( atoms/cm 3) Oxygen ≤ × 10 18 碳含量( atoms/cm 3) Carbon ≤ × 10 16 少子寿命(μs) surface passivation ≥ 10 单晶晶向 Pulled Ingot Orientation <100> ± ° 位错密度(/ cm 3) Dislocation density ≤ 1000 外形 externality 硅片外形尺寸( mm) Dimensions Tolerance 156 × 156 ± 硅片直径( mm) Wafer Diameter 200 ± 硅片中心厚度( μ m) Center Thickness 200 ± 20 总厚度变化-TTV (μ m) Total Thickness Variation ≤ 40 硅片相邻边垂直度( °) perpendicularity 90± 硅片边长极差( mm) Length difference ≤ 硅片弯曲度(μm) BOW≤ 30 外观 appearance 线痕( μm) Sawmark ≤ 30 边缘缺陷: Edge defect quantity 深度≤ mm , Edge defect width ≤ 长度≤ mm Edge defect extension ≤ mm 间隔≥ 30mm Distance ≥ 30mm ≤ 2 表面污点/ 斑点 Dirt None 表面穿孔/ 裂纹 Hole/Crack None 目视翘曲 Obvious tactility None