柔性衬底上ZnO基透明导电薄膜生长和性能的研究.pdf

浙江大学硕士学位论文摘要 ZnO薄膜是继铟锡氧化物(ITO)薄膜之后,新开发出来的一种新型的宽禁带、在可见光光区范围内具有高透射率和低电阻率的力型半导体透明导电薄膜。 ZnO薄膜的低阻特性使其成为一种重要的电极材料。而高透光率和大的禁带宽度使其可用作太阳能电池的窗口材料、低损耗光波导器材料等。Znl.。MgxO=重合成合金是基于ZnO、MgO的理想透明导电氧化物(TCO),也是新型光电子信息材料,与ZnO、MgO相比有新的物理特性和应用前景。在柔性衬底上制备的透明导电膜具有许多独特的优点,如质量轻、可折叠、不易破碎、易于大面积生产、便于运输等。如果将ZnO、。O薄膜与柔性衬底结合起来,在柔性衬底上生长制备性能可控的ZnO基半导体薄膜,则将有望开辟ZnO基半导体器件应用的新领域。本文通过脉冲激光沉积技术在柔性衬底聚对苯二甲基乙二醇酯(PET)上制备成功了透明的高导电ZnO::Ga透明导电薄膜(x=),并研究了薄膜中Mg的掺杂量、沉积温度、沉积时间、沉积氧压、ZnO缓冲层厚度, 研究这些参数对薄膜结构及光电性能的影响。通过研究,我们主要获得了以下研究成果: ,以ZnO:Ga陶瓷靶作为靶材,成功在柔性衬底 PET上制备出了高透明度低电阻率的导电ZnO:Ga薄膜。研究表明,增加薄膜中Mg的含量,可以使薄膜的禁带宽度增加,电学性能降低;而在薄膜制备前预沉积缓冲层可以使薄膜的结构以及电学性能明显改善。系统研究了沉积温度、沉积时间、沉积氧压、: Ga薄膜性能的影响。研究表明,沉积时间为40分钟时薄膜的晶体质量最好;:Ga薄膜的各方面性能有显著的影响, ;预沉积一层50nm ZnO缓冲层后,透明导电薄膜的结构和电学性能得到提高,可见光区透过率则稍有下降。关键词:脉冲激光沉积技术,柔性衬底,ZnO:Ga,透明导电薄膜 V 浙江大学硕士学位论文 Abstract Transparent conductive oxide(TCO)films have received great attention due to theirapplications astheelectrodes ofthe solarcells orotheroptoelectronic devices. The heavily n-type doped ZnO films have several advantages over indium tinoxide films(ITO)or Sn02 weknow,the band gap ofZnO Callbeincreased byMg alloy isalso ausefulmaterial inphotoelectricity field. Incontrast丽tIl theglass substrates,the TCO films prepared on flexible substrates have many advantages,which are robust,light,and low ZnO thinfilms on flexiblesubstrate would open anew fieldinZnO deviceapplies. Transparent conducting ZnO:Ga :Ga films were deposited on flexiblePolyethylene terephthalate(PET)substrates bypulsed laserdeposition(PLD). The effectofMg content,thethickness ofbufflayer,deposition temperature,oxygen pressure and deposition time tothethinfilmperformance was main resultswere obtained as follows: prepared c-axis oriented ZnO:Ga films on flexiblesubstrate(PED by Pulsed laser deposition(PLD).The film are transparent and systematically analyzed the influence ofMg