a new drain-current injection technique for the measurement of.pdf

I 1558 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 8, AUGUST 1993 Presence of deep-level states may have serious effects in the per- formance of devices based on diamond. For example, in the case of p-n junction devices, the reverse leakage current, the switching speed, and on-state conduction characteristics are dependent on the lifetimes of the carriers, which in turn are controlled by the posi- tion, density, and capture cross sections of the traps. Also, deep- level impurities lead pensation effects, resulting in changes in the background resistivity. Changes in resistivity affect the breakdown voltage and current conduction in power Schottky rec- tifiers and p-n junction devices. IV. CONCLUSIONS Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on natural diamond crystals have been inves- tigated. These contacts show excellent rectification with low re- verse leakage current densities. Although the I-V and C-V char- acteristics indicate the presence of a barrier, the I-V characteristics are apparently dominated by bulk effects rather than by thermionic emission over the barrier. Logarithmic plots of the I-V character- istics in the forward direction indicate space-charge-limited current conduction through the active volume of the devices. The natural diamond crystals investigated show the presence of deep levels in the energy r