溅射条件对ZnOAl薄膜生长和性能的影响.pdf

Trans. Nonferrous Met. Soc. China 25(2015) 1517−1524


Effect of sputtering conditions on growth and properties of ZnO:Al films

Qian SHI1,2, Ming-jiang DAI1,2, Song-sheng LIN1,2, Hui-jun HOU1,2, Chun-bei WEI1,2, Fang HU1,2

1. Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, Guangzhou 510651, China;
2. New Materials Department, Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651, China

Received 7 May 2014; accepted 25 March 2015


Abstract: Al-doped zinc oxide (AZO) films were deposited on glass substrates by mid-frequency ron sputtering. The effects
of substrate rotation speed and target−substrate distance on the electrical, optical properties and microstructure and crystal structures
of the resulting films were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction
(XRD), spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong
preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, panying
with the unbalanced grains grows. For the films prepared at different target−substrate distances, the uniform microstructure and
morphology are observed. The highest carrier concentration of ×1020 cm−3 and Hall mobility of 1