薄厚对GZO透明导电薄膜结构和光电性能的影响.doc


薄厚对 GZO 透明导电薄膜结构和光电性能
的影响#
张传瑜,王绪本,邓邦林,史顺平*
5
10
(成都理工大学地球物理学院,成都,610059)
摘要:本文主要是采用射频磁控溅射的方法在玻璃衬底上沉积掺镓氧化锌(GZO)透明导电薄
膜。通过 X 射线衍射仪(XRD)、紫外可见分光光度计、Hall 效应测试仪等仪器测试分析
了薄膜厚度对薄膜的晶体结构、光学和电学性能的影响。实验结果表明,GZO 薄膜具有良
好的 c 轴择优取向,且衍射峰强度随膜厚增加呈现出增强趋势。在可见光范围内的光学平均
透过率均为 90 %以上,且随膜厚的增加逐渐降低。同时也表明薄膜的体电阻率受膜厚影响
较大。在综合考虑光电性能的前提下膜厚为 510 nm 时的 GZO 薄膜成膜质量最佳。
关键词:应用物理学;掺镓氧化锌;膜厚;磁控溅射;光电特性;
中图分类号:O484
15
Effect of film thickness on structure and optoelectrical
properties of GZO Transparent conductive films
ZHANG Chuanyu, WANG Xuben, DENG Banglin, SHI Shunping
(Geophysics School,Chengdu University of Technology,Chengdu,610059)
20
25
30
35
40
Abstract: The gallium-doped zinc oxide (GZO) transparent conductive films were essfully
prepared on glass substrates by the radio-frequency ron sputtering technique. Employing
X- ray diffraction (XRD), UV-visible spectrophotometer, Hall Effect measurement instrument, the
crystal structure and optoelectrical properties of GZO thin films were measured and analyzed in
detail. The experimental results show that all of GZO films are polycrystalline with a hexagonal
structure and a preferred orientation along the c-axis. And the diffraction peak intensity gradually
increases with the increase of film thickness. The average optical transmittance in the visible range
is all above 90%. In addition, the body resistivities of films were affected