氧分压对非晶SiO2薄膜结构及性能的影响.doc


氧分压对非晶 SiO2 薄膜结构及性能的影响
丁安邦,牟宗信,林曲,陈宝清**
(大连理工大学三束材料改性教育部重点实验室,辽宁大连 116024)
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摘要:不同氧分压下,采用中频反应磁控溅射方法在单晶硅基体上制备 SiO2 薄膜。利用 X
射线衍射仪(XRD)、傅里叶变换红外光谱仪(FTIR)、原子力显微镜(AFM)等研究了氧分压
对 SiO2 薄膜晶体结构、化学键和表面形貌的影响。还探讨了氧分压对薄膜沉积速率的影响,
并运用反应方程分析了氧分压影响沉积速率的机制。结果显示:室温下沉积速率随氧分压的
增大而减小;在不同氧分压下沉积的 SiO2 薄膜均为非晶态结构;氧分压为 25%时, 薄膜具
有均匀、光滑、致密的表面特征;红外吸收光谱测试表明,随着氧分压的升高,薄膜中依次
形成 Si-O1-Si3 、Si-O2-Si2、Si-O3-Si1 和 SiO4 等结构,这几种结构分别对应着 Si-O-Si 键
不同模式的振动吸收,导致 Si-O-Si 伸缩振动峰向高波数方向移动。
关键词:凝聚态物理;磁控溅射;氧分压;非晶 SiO2 薄膜;红外光谱
中图分类号:O469
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Effects of O2 partial pressure on the Structure and
properties of amorphous SiO2 films
DING Anbang, MU Zongxin, LIN Qu, CHEN Baoqing
(Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of
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Technology, LiaoNing DaLian 116024)
Abstract: SiO2 thin films were prepared by medium frequency reactive ron sputtering
under various oxygen partial pressure ratios. The influence over structure, chemical bonding and
surface morphology of SiO2 thin films were then analyzed by X-ray diffraction (XRD), Fourier
transform infrared spectroscopy, atomic force microscopy (AFM). And the deposition rate was
also calculated. The as-deposited films are all amorphous and the deposition rate decreases with
the increase of oxygen partial pressure ratio at room temperature. The films have uniform,smooth
and dense surface morphology when the