复合沉积氧化亚铜薄膜组织结构和性能.pdf

哈尔滨工业大学工学硕士学位论文摘要本文采用离子注入复合沉积技术,在硅基片上制备了铜氧化物薄膜,通过改变通入气体种类、偏压等参数,在不同工艺条件下制备铜氧化物薄膜。利用XPS、XRD、AFM研究离子注入复合沉积铜氧化物薄膜的成分、相结构及表面形貌;利用纳米硬度计测量离子注入复合沉积铜氧化物薄膜的硬度及弹性模量;利用四探针方法测量铜氧化物薄膜的电阻;利用分光光度计研究铜氧化物薄膜的光吸收性能。制备工艺对薄膜的相成分有显著的影响。在只通入氩气的条件下,所获得薄膜的主要成分为铜单质。在通入氩气和氧气混合气,偏压小于lkV 时,所获得薄膜的主要成分为氧化亚铜,薄膜的XRD图中没有发现氧化亚铜,氧化亚铜可能为非晶结构。当偏压大于2kV的时候,所获得的薄膜的主要成分为氧化铜。改变偏压会影响所获得薄膜的表面粗糙度,偏压小于 lkV时,沉积得到的薄膜表面比较平滑。离子注入复合沉积铜氧化物薄膜过程中,,所获得的薄膜的纳米硬度和弹性模量变化不大;当偏压的变化范围为lkv~10kV 时,所获得的薄膜的纳米硬度和弹性模量随偏压的升高而升高。离子注入复合沉积铜氧化物薄膜过程中,当偏压小于2kV的时候,薄膜的可见光范围的吸收光谱表现出了明显的半导体特征,在氧化亚铜带隙附近吸收陡然增强。随着偏压的升高,薄膜中含有的氧化铜增多,吸收光谱中的半导体特征消失。通过离子注入复合沉积的方法获得的氧化亚铜薄膜具有较低的电阻率,最低为2191f]cm。关键词氧化亚铜;薄膜;纳米硬度;吸收光谱哈尔滨工业人学工学硕士学位论文 Abstract Cuprous oxide thin films were deposited on silicon substrate by plasma based ionimplantation and deposition withdifferentpulsed voltages and gases. The position and phase structure ofthedeposited films were determined by x—ray photoelectron spectroscopy(xps)and X—ray diffraction (XRD).The surface morphologies were studied by atomic force microscope (AFM、.The nanohardheSS and modulus were measured by electricalresistivities ofthethinfilms were measured by four-probe met}10ds. The properties ofoptical absorption were studied byspectrophotometer. The position was affected by deposited atdifferent pulsed process atmosphere was only Ar,position ofthethin films was process atmosphere were Ar and voltage ranged from O-lkV position of thethinfilmsmostly was cuprous peak ofCu20 was not found intheXRD spectra,it issuggested that the structure ofCu20 pulsed voltage ranged from 2-l0kv- position ofthe thinfilmsmostly was copper roughness offilms was affected by pulsed filmsprepared by pulsed voltage ranged from 0-lkV hadsmooth surfacemorphology. The nanohardness and modulus ofthefilms changed littlewhen pulsed voltage ranged from 0- nanohardness and modulus ofthe films increased withpulsed voltage. Absorption o