直流磁控溅射工艺对ito 薄膜光电性能的影响.doc

------------------------------------------------------------------------------------------------ ——————————————————————————————————————直流磁控溅射工艺对 ITO 薄膜光电性能的影响第 44 卷第 7期 2016 年7月硅酸盐学报 JOURNAL OF THE CHINESE CERAMIC SOCIETY Vol. 44, No. 7 July , 2016 DOI : .0454- 直流磁控溅射工艺对 ITO 薄膜光电性能的影响彭寿 1,2 ,蒋继文 1,2 ,李刚 1,2 ,张宽翔 1,2 ,杨勇 1,2 , 姚婷婷 1,2 ,金克武 1,2 , 曹欣 1,2 ,徐根保 1,2 ,王芸 1,2 (1. 浮法玻璃新技术国家重点实验室, 安徽蚌埠 233000 ; ,安徽蚌埠 233018) 摘要:采用直流磁控溅射系统在玻璃衬底上制备了氧化铟锡(ITO) 薄膜。通过 X 射线衍射仪、扫描电子显微镜、分光光度计、 Hal l 效应测试系统研究了热退火与原位生长、衬底温度、直流溅射功率对薄膜结构、表面形貌以及光电性能的影响。结果表明: 与室温生长并经 410 ℃热退火后的薄膜相比, 410 ℃原位生长可获得光电性能更好的薄膜; 随着衬底温度的增加, 电阻率单调减小, 光学吸收边出现蓝移;在溅射功率为 85W 时薄膜的光电性能达到最佳。在衬底温度为 580 ℃、溅射功率为 85W 的工艺条件下,可制备出电阻率为 × 10–4?· cm 、可见光范围内平均透过率为 93% 的光电性能优异的------------------------------------------------------------------------------------------------ —————————————————————————————————————— ITO 薄膜。关键词:直流磁控溅射;氧化铟锡薄膜;衬底温度;溅射功率中图分类号: TB34 文献标志码: A 文章编号: 0454 – 5 648(2016)07 – 0987 – 08 网络出版时间: 2016 – 05– 30 10:27:26 网络出版地址: s/detail/ Effect of DC ron Sputtering Process on Optical and Electrical Properties of ITO Thin Films PENG Shou1,2, JIANG Jiwen1,2, LI Gang1,2, ZHANG Kuanxiang1,2, YANG Yong1,2, YAO Tingting1,2, JIN Kewu1,2, CAO Xin1,2, XU Genbao1,2, WANG Yun1,2 (1. State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233000, Anhui, China; 2. Bengbu Design & Research Institute for Glass Industry, Bengbu 233018, Anhui, China) Abstract: The indium tin oxide (ITO) thin films were deposited on glass substrates in DC ron sputtering system. The effects of post-annealing versus in-situ heating, substrate temperatures and DC power on the structural, morphological, electrical and optical properties of ITO thin films were investigated by X-ray diffraction scanning electronic microscopy, UV-Vis spectrophotometry and Hall effect analysis, respectively. The results show that the better electrical and optical ---------------------