ZnO薄膜的制备、掺杂工艺研究.pdf

ZnO薄膜的制备、掺杂工艺研究.pdf中南民族大学硕士学位论文ZnO薄膜的制备、掺杂工艺研究姓名:黄兴奎申请学位级别:硕士专业:等离子体物理指导教师:孙奉娄20060520中南民族大学硕士学位论文 I 摘要本征ZnO是一种高阻半导体掺杂Al后的ZAO(ZnOAl)电阻率大大降低ZnO及其ZAO薄膜是光学透明薄膜具有优异的光电特性在太阳能电池压电器件液晶显示反射热镜紫外与红外光阻挡层及气体敏感器件等方面应用前景看好ZnO薄膜材料本身无毒性制备温度低工艺相对简单易于实现掺杂各种制备方法所用的原料都易得价廉随着其性质研究的深入应用领域将不断扩大因此要探索新的制备方法研究多因素之间的交互影响衬底表面化学反应机理气体流动状态和传热传质过程以获得更优的ZnO具有重要意义本论文探索了一种新的ZnO和ZAO薄膜的制备方法通过分析比较ZnO薄膜的各种制备技术采用自行研制的电源结合中频等离子体化学气相沉积(MF-PECVD)和喷雾热解法各自的优点制备了ZnO及ZAO薄膜同时研究了样品的光学性质以及ZnO薄膜的光催化作用探索了ZnO薄膜的制备最佳工艺参数并对其性能进行了表征通过XRDIRXPSUV-+存在说明ZnO的存在XRD检测表明载玻片上沉积有纤锌矿型ZnO沉积薄膜可见光平均透射率可达87%以上反应室总气压对薄膜吸光度影响较大沉积时间和锌源温度对薄膜吸光度影响较小衬底温度总气压锌源浓度影响成膜速率衬底温度400时沉积薄膜接近无色取向性好表面均匀附着力好衬底温度是薄膜C轴高度取向生长的敏感因素ZnO薄膜光催化降解甲基橙有一定效果探索了ZAO薄膜的制备利用正交设计法设计实验考察衬底温度锌源浓度沉积时间掺杂量对ZAO薄膜透射率的影响通过UV-Vis对ZAO薄膜的透射率进行检测结果表明MF-.%最后比较了ZnO与ZAO薄膜透射率的差异并从理论上给出了初步的解释关键词ZnO薄膜Al掺杂中频等离子体化学气相沉积正交设计ZnO薄膜的制备掺杂工艺研究II ABSTRACT Intrinsic ZnO is a high electric-resistance semiconductor, the resistance of ZAO(ZnO: Al ) has reduced a lot after Al-doping. ZnO and it’s doped films are optical transparent films which have fine photo-electronic properties and broad possibilities of usage in the fields of solar cells, piezoelectric sensors, LCD display, reflect thermal mirror, resistance layers of infrared light and ultraviolet light, gas sensors, varistors, and so on. Because of the abundant reserves of raw material, low cost, no poison, low preparation temperature, easy to prepare and dope, ZnO is a kind of very promising material. In a word, new preparation method, mutual effects of multi-factors, chemistry reaction mechanism, gas flowing status and conduction of heat and mass need to be studied for finer ZnO films. In this paper, a new preparation method of ZnO and ZAO films were studied. Various preparation methods were analysed pared, the merits of MF-PECVD and spray pyrolysis were adop