化学浴沉积法制备Sb掺杂SnS薄膜.pdf

第43卷第12期2015年12月硅酸盐学报Vol. 43,No. 12 December,2015 JOURNAL OF THE CHINESE CERAMIC SOCIETY DOI:.0454- 化学浴沉积法制备Sb掺杂SnS薄膜夏冬林,徐俊,黄波(武汉理工大学,硅酸盐建筑材料国家重点实验室,武汉 430070) 摘要:以氯化亚锡、硫代乙酰胺、三氯化锑为反应物,采用化学浴沉积法在玻璃衬底上沉积不同锑掺杂量(摩尔分数)硫化锡(SnS:Sb)膜,研究了锑掺杂量对薄膜晶相结构、表面形貌和光电性能的影响。结果表明:锑掺杂SnS薄膜是具有正交结构多晶薄膜,薄膜为纳米片组装成的花状球形颗粒。%%,。随着Sb掺杂量的增加,SnS薄膜的电阻率呈现先下降后增大趋势,%时,×103?·cm。关键词:锑掺杂硫化锡薄膜;化学浴沉积;光电性能;Hall效应中图分类号:TN304 文献标志码:A 文章编号:0454–5648(2015)12–1759–06 网络出版时间:2015–11–19 11:29:00 网络出版地址:s/detail/ of Sb-doped SnS Thin Films Deposited via Chemical Bath Deposition XIA Donglin, XU Jun, HUANG Bo (Wuhan University of Technology, State Key Laboratory of Silicate Materials for Architectures, Wuhan 430070, China) Abstract: Sb-doped tin sulphide (SnS:Sb) thin films with different antimony contents (in mole fraction) were grown on a glass substrate via chemical bath deposition. The precursor solution was prepared from tin (II) chloride, thioacetamide and antimony trichloride. The influence of the content of Sb-doped on the crystal structure, morphology and photoelectric property was investigated. The results indicate that the films are polycrystalline SnS:Sb with the orthorhombic structure. The nanoflakes assembled flower-like sphe